Advanced SRAM Analysis
Comprehensive simulation results for the NBA⁺ SRAM implementation
Process Corner Analysis
SRAM performance across different process corners
Process Corner Simulation Results
Performance Across Corners:
| Process Corner | Write Time (ns) | Read Time (ns) | SNM (mV) | Power (μW) |
|---|---|---|---|---|
| TT (Typical) | 4.8 | 3.2 | 165 | 1.85 |
| FF (Fast-Fast) | 3.2 | 2.1 | 142 | 2.45 |
| SS (Slow-Slow) | 7.5 | 5.8 | 187 | 1.25 |
| SF (Slow-Fast) | 5.9 | 4.3 | 153 | 1.65 |
| FS (Fast-Slow) | 5.2 | 3.9 | 158 | 1.78 |
Key Observations:
- FF corner shows fastest operation but reduced SNM and higher power consumption
- SS corner shows slowest operation but improved SNM and lower power consumption
- Cross-corner simulations (SF, FS) show asymmetric behavior affecting PMOS and NMOS differently
- All corners maintain functional operation with acceptable margins
- Write operation is more sensitive to process variation than read operation across all corners
SPICE Simulation Parameters:
* SRAM Corner Analysis Simulation
.include "45nm_PTM_TT.txt" $ Typical corner
.include "45nm_PTM_FF.txt" $ Fast-Fast corner
.include "45nm_PTM_SS.txt" $ Slow-Slow corner
.include "45nm_PTM_SF.txt" $ Slow-Fast corner
.include "45nm_PTM_FS.txt" $ Fast-Slow corner
.param supply=1.0
.param temp=27C
.option post
.tran 0.01n 50n